Saturation of impurity photoconductivity in n-GaAs with intense YAG laser light
- 1 September 1975
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 27 (5) , 297-299
- https://doi.org/10.1063/1.88453
Abstract
We report the observation of saturation of impurity photoconductivity in semiconducting n‐GaAs illuminated by a Q‐switched Nd:YAG laser with light intensity up to 3.5 MW/cm2. From the saturation of conductivity we determined the concentration of defects to be ≈1016 cm−3. These form the well‐known 1.2‐eV absorption band and are presumably Ga vacancies. The curve of photoconductivity versus light intensity can be fitted with a simple model, which yields the electron recombination coefficient. The relation of the absorption band to nonlinear optical studies in GaAs at 1.06 μ is reviewed.Keywords
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