Metal electromigration damage healing under bidirectional current stress
- 1 December 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 14 (12) , 554-556
- https://doi.org/10.1109/55.260787
Abstract
The AC electromigration lifetime, without DC component, has been studied in a wide frequency range (mHz to 200 MHz) and found to be linearly proportional to the repetition frequency of the AC stressing current. This behavior is observed in both of the metallization systems (Al-2% Si and Cu) investigated. This provides further confirmation that AC lifetime is orders of magnitude longer than DC lifetime and that CMOS signal lines may be called upon to carry much larger current than allowed in present practice.<>Keywords
This publication has 4 references indexed in Scilit:
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- AC electromigration characterization and modeling of multilayered interconnectsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1993
- Electromigration performance of electroless plated copper/Pd-silicide metallizationIEEE Electron Device Letters, 1992
- Projecting interconnect electromigration lifetime for arbitrary current waveformsIEEE Transactions on Electron Devices, 1990