Estimation methods for localized-state distribution profiles in undoped and phosphorous-dopeda−Si:H

The effective temperature which characterizes the localized states of hydrogenated amorphous silicon ($a-\mathrm{S}\mathrm{i}:\mathrm{H}$) has been obtained by measuring the space-charge-limited currents, photoconductivity dependences on the incident-light intensity, and transient photocurrents in a series of phosphorous-doped films. The effective temperatures obtained by those three methods coincide for the highly doped specimens. For the undoped specimens, however, the coincidence is not as good because of recombination effects.