Breakdown in silicon oxides (II)—correlation with Fe precipitates
- 15 March 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (6) , 582-584
- https://doi.org/10.1063/1.95547
Abstract
Thin silicon oxides of metal-oxide-semiconductor (MOS) capacitors were studied by transmission electron microscopy. The MOS capacitors were fabricated on silicon wafers which had been intentionally contaminated by Fe+ ion implantation. It was found that Fe precipitates crossing the SiO2/Si interface penetrated into the silicon oxide from the silicon substrate. They reduced the breakdown strength by inducing singularity points in the silicon oxide.Keywords
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