Material and electronic properties of boron-doped silicon films deposited from SiH4BCl3N2 mixtures in an industrial low pressure chemical vapour deposition furnace
- 1 September 1991
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 204 (1) , 33-48
- https://doi.org/10.1016/0040-6090(91)90492-g
Abstract
No abstract availableKeywords
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