Structural and technological properties of heavily in situ phosphorus-doped low pressure chemically vapour deposited silicon films
- 1 August 1989
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 175, 43-48
- https://doi.org/10.1016/0040-6090(89)90806-7
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
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