Subthreshold electron velocity-field characteristics of GaAs and In0.53Ga0.47As
- 15 March 1985
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 57 (6) , 2295-2298
- https://doi.org/10.1063/1.335464
Abstract
The electron drift velocities in GaAs and In0.53Ga0.47As have been measured at room temperature and at liquid‐nitrogen temperature for electric fields up to the onset of the Gunn effect. The experiments were performed on samples with carrier concentrations from 4×1014 to 1×1018 cm−3. The results illustrate effects of ionized impurity scattering, polar optical phonon scattering, alloy scattering, and intervalley scattering on electron transport in this range of electric fields, and confirm the potential of In0.53Ga0.47As for high‐speed device applications.This publication has 17 references indexed in Scilit:
- Transferred-electron effect in In 0.53 Ga 0.47 AsElectronics Letters, 1983
- Temperature dependent electron velocity-field characteristics for In0.53Ga0.47AS at high electric fieldsJournal of Electronic Materials, 1982
- High field temperature dependent electron drift velocities in GaAsApplied Physics Letters, 1982
- Measurement of the Γ-L separation in Ga0.47In0.53As by ultraviolet photoemissionApplied Physics Letters, 1982
- Electron concentration dependence of Hall factor in In0.53Ga0.47AsApplied Physics Letters, 1982
- Electron Hall mobility calculations and alloy scattering in Ga 0.47 In 0.53 AsElectronics Letters, 1981
- Alloy scattering and high field transport in ternary and quaternary III–V semiconductorsSolid-State Electronics, 1978
- Velocity-field characteristics of Ga1−xInxP1−yAsy quaternary alloysApplied Physics Letters, 1977
- Liquid Phase Epitaxial Growth, Electron Mobility and Maximum Drift Velocity of In1-xGaxAs (x\cong0.5) for Microwave DevicesJapanese Journal of Applied Physics, 1977
- Temperature Dependence of the Transport Properties of Gallium Arsenide Determined by a Monte Carlo MethodJournal of Applied Physics, 1970