Reduction of lateral ion straggling for the fabrication of intermixed GaAs/AlGaAs quantum wires
- 1 January 1993
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 80-81, 827-830
- https://doi.org/10.1016/0168-583x(93)90691-x
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Polarization effects and carrier capture in quantum wiresSuperlattices and Microstructures, 1992
- Mass and dose dependence of ion-implantation-induced intermixing of GaAs/GaAlAs quantum-well structuresJournal of Applied Physics, 1990
- Carrier capture in intermixed quantum wires with sharp lateral confinementApplied Physics Letters, 1990
- Fabrication of a GaAs quantum-well-wire structure by Ga focused-ion-beam implantation and its optical propertiesPhysical Review B, 1988
- Carrier confinement potential in quantum-well wires fabricated by implantation-enhanced interdiffusion in the GaAs-As systemPhysical Review B, 1987
- Optically detected carrier confinement to one and zero dimension in GaAs quantum well wires and boxesApplied Physics Letters, 1986
- Theoretical Gain of Quantum-Well Wire LasersJapanese Journal of Applied Physics, 1985
- Multidimensional quantum well laser and temperature dependence of its threshold currentApplied Physics Letters, 1982
- Theoretical Considerations in Lateral Damage Distribution Formed by Ion-ImplantationJapanese Journal of Applied Physics, 1975