Carrier confinement potential in quantum-well wires fabricated by implantation-enhanced interdiffusion in the GaAs-Ga1−xAlxAs system

Publisher Website
Google Scholar
Abstract
We compute the shape of the confinement potential resulting from the interdiffusion of a GaAs quantum well locally enhanced by defects due to gallium implantation. We use the simplest model taking into account the lateral diffusion of the defects. A variational calculation of the first two electronic levels within this two-dimensional potential supports the assignment of the recently observed new cathodoluminescence lines to electrons laterally confined in a graded potential.