Electron-acoustic phonon scattering in SiO2 determined from a pseudo-potential for energies of E≳E BZ

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Abstract
The existing description of hot electron transport in silicon dioxide contains the deficiency that the resulting electron inverse mean free paths and loss rates associated with electron‐acoustic phonon scattering continue to increase in an unphysical way at energies above Egap. One can remove that discrepancy by introducing a pseudo‐potential which reflects the screened atom characteristic of higher energy electron‐lattice interactions. The low energy, low q scattering, described in terms of the deformation potential, is then recovered, intact, in the low q limit. The use of the screened Coulomb potential introduces no adjustable parameters and results in an acoustic scattering cross section which approaches the phase shift derived elastic scattering cross section at E ≳ Egap.