A 5 volt high density poly-poly erase flash EPROM cell
- 6 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- A flash-erase EEPROM cell with an asymmetric source and drain structurePublished by Institute of Electrical and Electronics Engineers (IEEE) ,1987
- A novel high-speed, 5-volt programming EPROM structure with source-side injectionPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1986
- A single transistor EEPROM cell and its implementation in a 512K CMOS EEPROMPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1985