A Wilkinson power divider on a low resistivity Si substrate with a polyimide interface layer for wireless circuits
- 25 June 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
A 3-dB Wilkinson power divider on low resistivity silicon substrate (20 -cm) with a polyimide interface layer is presented for the first time. The divider utilizes Finite Ground Coplanar (FGC) line technology, and operates at a center frequency of 15 GHz. Low insertion loss and high return loss and isolation is achieved by using a 20 m thick polyimide interface layer on top of the silicon wafer, and a line geometry that minimizes field interaction with the lossy Si substrate. The attenuation of the FGC lines is comparable with that of thin film microstrip lines on similar substrates. Experimental and full-wave analysis results are provided.Keywords
This publication has 9 references indexed in Scilit:
- Microwave filters on a low resistivity Si substrate with a polyimide interface layer for wireless circuitsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A folded-slot antenna on low resistivity Si substrate with a polyimide interface layer for wireless circuitsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Low-loss CPW on low-resistivity Si substrates with a micromachined polyimide interface layer for RFIC interconnectsIEEE Transactions on Microwave Theory and Techniques, 2001
- Measured attenuation of coplanar waveguide on CMOSgrade silicon substrates with polyimide interface layerElectronics Letters, 1998
- Characterization of thin film microstrip lines on polyimideIEEE Transactions on Components, Packaging, and Manufacturing Technology: Part B, 1998
- X- and Ku-band amplifiers based on Si/SiGe HBT's and micromachined lumped componentsIEEE Transactions on Microwave Theory and Techniques, 1998
- GaAs versus quartz FGC lines for MMIC applicationsIEEE Transactions on Microwave Theory and Techniques, 1998
- Recent advances with SiGe heterojunction bipolar transistorsThin Solid Films, 1997
- Si/SiGe MMIC'sIEEE Transactions on Microwave Theory and Techniques, 1995