Reflectivity of a semiconducting crystal in the exciton resonance region of the spectrum
- 30 September 1984
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 17 (27) , 4865-4875
- https://doi.org/10.1088/0022-3719/17/27/016
Abstract
It is shown how bilocal exciton-polariton theory in configuration space does explain the deviations in the exciton reflection spectra from the classical oscillator lineshape. Apart from a numerical matrix inversion the calculations are performed by analytical methods. Comparison with the experimental spectra for CdS and GaAs leads to very good agreement.Keywords
This publication has 13 references indexed in Scilit:
- Properties of Exciton Polaritons Studied in a One‐Dimensional ModelPhysica Status Solidi (b), 1982
- Depth-dependent eigenenergies and damping of excitonic polaritons near a semiconductor surfacePhysical Review B, 1981
- Polariton structure of interband transitions in semiconductorsPhysica Status Solidi (b), 1979
- Eigenstates of excitons near a surfacePhysical Review B, 1978
- The Excitonic Surface Potential in SemiconductorsPhysica Status Solidi (b), 1978
- The Surface Effect on the Reflectivity Spectrum Originating from a Large Radius ExcitonJournal of the Physics Society Japan, 1976
- Polariton Reflectance and Photoluminescence in High-Purity GaAsPhysical Review B, 1973
- Effect of Spatial Dispersion on the Properties of a Semi-Infinite DielectricPhysical Review B, 1973
- Structure of the Electromagnetic Field in a Spatially Dispersive MediumPhysical Review Letters, 1971
- Theoretical and Experimental Effects of Spatial Dispersion on the Optical Properties of CrystalsPhysical Review B, 1963