A sunken phase in aluminum-copper interconnects as a new kind of stress void

Publisher Website

9 December 2002

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/vmic.1991.153003

Abstract

No abstract available

Keywords

This publication has 3 references indexed in Scilit:

Void formation mechanism in VLSI aluminum metallization
IEEE Transactions on Electron Devices, 1989
Crystal forms of hillocks and voids formed by electromigration on ultrapure gold and silver wires
Applied Physics A, 1977
On the relations between structure and morphology of crystals. I
Acta Crystallographica, 1955