Void formation mechanism in VLSI aluminum metallization
- 1 June 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 36 (6) , 1050-1055
- https://doi.org/10.1109/16.24347
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
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- Mechanism of stress-induced migration in VLSI aluminum metallizationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
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