Kinetics of structural relaxation and hydrogen evolution from plasma deposited silicon nitride
- 25 January 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (4) , 284-286
- https://doi.org/10.1063/1.99495
Abstract
Infrared absorption measurements and the temperature dependence of stress have been used to establish the kinetics of structural relaxation and hydrogen evolution from plasma deposited a-SixNy :H films. The Arrhenius rate law describes the dissociation of N–H and Si–H bonds which occurs on annealing the films above 600 °C. The activation energies deduced from the infrared data are lower than the respective bond dissociation energies. The films undergo a rapid stress relaxation in the temperature range 400–650 °C. The discussion of the experimental results highlights possible mechanisms for the evolution of hydrogen from a-SixNy:H networks.Keywords
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