In-situ observation and formation mechanism of aluminum voiding
- 6 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Beading instabilities in thin film lines with bamboo microstructuresThin Solid Films, 1986
- Stress Induced Voids in Aluminum Interconnects During IC Processing8th Reliability Physics Symposium, 1985
- Thermal stresses and cracking resistance of dielectric films (SiN, Si3N4, and SiO2) on Si substratesJournal of Applied Physics, 1978