Thermal stresses and cracking resistance of dielectric films (SiN, Si3N4, and SiO2) on Si substrates
- 1 April 1978
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 49 (4) , 2423-2426
- https://doi.org/10.1063/1.325084
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Lorentz-Lorenz correlation for reactively plasma deposited Si-N filmsApplied Physics Letters, 1978
- The temperature dependence of stresses in aluminum films on oxidized silicon substratesThin Solid Films, 1978
- Calculated elastic constants for stress problems associated with semiconductor devicesJournal of Applied Physics, 1973
- Thermal Expansion of Sputtered Silicon Nitride FilmsJournal of the Electrochemical Society, 1969
- Thermal Expansion Coefficient of a Pyrolitically Deposited Silicon Nitride FilmJapanese Journal of Applied Physics, 1967
- Measurement of Strains at Si-SiO2 InterfaceJournal of Applied Physics, 1966
- The tension of metallic films deposited by electrolysisProceedings of the Royal Society of London. Series A, Containing Papers of a Mathematical and Physical Character, 1909