Microscopic calculation of the surface contribution to optical reflectivity: Application to Si
- 15 June 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 33 (12) , 8885-8888
- https://doi.org/10.1103/physrevb.33.8885
Abstract
A microscopic calculation of the surface optical properties of Si(111) and Si(110) within the randomphase approximation is presented. Surface effects on optical matrix elements are found important in order to explain the anisotropic reflectance observed at surfaces of cubic semiconductors. At frequencies above the bulk indirect gap, a large contribution to differential reflectivity turns out to be related to the structural changes occurring upon oxidation.Keywords
This publication has 16 references indexed in Scilit:
- Intrinsic Surface-Induced Optical Anisotropies of Cubic Crystals: Local-Field EffectPhysical Review Letters, 1985
- Anisotropies in the Above—Band-Gap Optical Spectra of Cubic SemiconductorsPhysical Review Letters, 1985
- Polarization-dependent reflectivity of Si(111)-(2×1) surface above the gapPhysical Review B, 1985
- Calculation of the atomic geometries of the (110) surfaces of III–V compound semiconductorsSurface Science, 1985
- Differential Reflectivity of Si(111)2×1 Surface with Polarized Light: A Test for Surface StructurePhysical Review Letters, 1984
- A Semi-empirical tight-binding theory of the electronic structure of semiconductors†Journal of Physics and Chemistry of Solids, 1983
- Reconstruction of Semiconductor Surfaces: Buckling, Ionicity, and-Bonded ChainsPhysical Review Letters, 1982
- New-Bonded Chain Model for Si(111)-(2×1) SurfacePhysical Review Letters, 1981
- Microscopic theory of optical properties of crystal surfacesSolid State Communications, 1981
- Realistic tight-binding model for chemisorption: H on Si and Ge (111)Physical Review B, 1976