Evidence of Si presence in self-assembled Ge islands deposited on a Si(001) substrate
- 24 August 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 73 (8) , 1044-1046
- https://doi.org/10.1063/1.122079
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Preferential nucleation of Ge islands at self-organized pits formed during the growth of thin Si buffer layers on Si(110)Journal of Applied Physics, 1998
- Phonons as probes in self-organized SiGe islandsApplied Physics Letters, 1997
- Competing growth mechanisms of Ge/Si(001) coherent clustersPhysical Review B, 1997
- Size distribution of Ge islands grown on Si(001)Applied Physics Letters, 1997
- Heterogeneous nucleation of coherently strained islands during epitaxial growth of Ge on Si(110)Applied Physics Letters, 1997
- Growth and characterization of self-assembled Ge-rich islands on SiSemiconductor Science and Technology, 1996
- Dislocation-free Stranski-Krastanow growth of Ge on Si(100)Physical Review Letters, 1990
- Optical spectra of SixGe1−x alloysJournal of Applied Physics, 1989
- Raman scattering from GexSi1−x/Si strained-layer superlatticesApplied Physics Letters, 1984
- Raman scattering in GeSi alloysSolid State Communications, 1973