The kinetics of the annealing of irradiation damage at low temperatures inn-type germanium

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Abstract
The annealing which occurs always near 65K following low-temperature electron-irradiation of n-type germanium is governed by second order (or higher) annealing kinetics. It follows that the experimental activation energy must vary from experiments performed on high resistivity material where the defect concentration is low to those on low resistivity material where the defect concentration is high. A model for the annealing of defects which accounts for this observation and involves the diffusion of ionized interstitials, is suggested.

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