Utilization of plasma hydrogenation in stacked SRAM's with poly-Si PMOSFET's and bulk-Si NMOSFET's
- 1 May 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 12 (5) , 233-235
- https://doi.org/10.1109/55.79567
Abstract
Poly-si PMOSFETs were utilized with bulk-Si NMOSFETs in stacked SRAM cells. Results regarding utilization of a plasma hydrogenation step in a stacked SRAM process sequence are reported. It is found that poly-Si PMOSFETs exhibit an increase in ON/OFF current ratio of four orders of magnitude. Bulk-Si NMOSFETs subjected to the same hydrogenation process exhibit no significant decrease in device lifetime or significant degradation in I-V characteristics compared to NMOSFETs which were not subjected to the plasma hydrogenation process. These results indicate that plasma hydrogenation can successfully be utilized to obtain improved performance stacked SRAMs.Keywords
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