Hydrogenation of transistors fabricated in polycrystalline-silicon films
- 1 August 1980
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 1 (8) , 159-161
- https://doi.org/10.1109/edl.1980.25272
Abstract
Transistors have been fabricated with their active channels in thin films of polycrystalline silicon. A subsequent hydrogen plasma treatment has been used to improve the transistor properties significantly by reducing the number of electrically active grain-boundary defects. Plasma conditions to maximize the hydrogenation effect have been briefly investigated.Keywords
This publication has 9 references indexed in Scilit:
- Enhanced conductivity in plasma-hydrogenated polysilicon filmsApplied Physics Letters, 1980
- A heat-resisting new amorphous siliconApplied Physics Letters, 1980
- A monolithic integrated circuit fabricated in laser-annealed polysiliconIEEE Transactions on Electron Devices, 1980
- The influence of plasma annealing on electrical properties of polycrystalline SiApplied Physics Letters, 1979
- Passivation of grain boundaries in polycrystalline siliconApplied Physics Letters, 1979
- cw laser anneal of polycrystalline silicon: Crystalline structure, electrical propertiesApplied Physics Letters, 1978
- Hydrogenation of evaporated amorphous silicon films by plasma treatmentApplied Physics Letters, 1978
- Field-effects in polycrystalline-silicon filmsSolid-State Electronics, 1972
- A 180-stage integrated thin-film scan generatorProceedings of the IEEE, 1966