The influence of plasma annealing on electrical properties of polycrystalline Si
- 1 October 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 35 (7) , 551-552
- https://doi.org/10.1063/1.91175
Abstract
Polycrystalline silicon doped with phosphorus and boron was prepared by low‐temperature CVD and was annealed in a hydrogen/nitrogen plasma at 300 °C. The dopants were introduced by ion implantation and the concentration ranged from 2×1016 to 2×1019 cm−3. Plasma annealing decreased the poly‐Si resistivity, which is significant at particular doping concentrations depending on density of localized states. The effect is due to reduction of deep localized states through hydrogenation and is canceled by additional annealing in nitrogen at 600 °C.Keywords
This publication has 7 references indexed in Scilit:
- Passivation of grain boundaries in polycrystalline siliconApplied Physics Letters, 1979
- Photoluminescence recovery in rehydrogenated amorphous siliconApplied Physics Letters, 1978
- Hydrogenation and dehydrogenation of amorphous and crystalline siliconApplied Physics Letters, 1978
- The electrical properties of polycrystalline silicon filmsJournal of Applied Physics, 1975
- Chemically Vapor Deposited Polycrystalline-Silicon FilmsIEEE Transactions on Parts, Hybrids, and Packaging, 1974
- Chemical Vapor Deposited Polycrystalline SiliconJournal of the Electrochemical Society, 1972
- Hall Mobility in Chemically Deposited Polycrystalline SiliconJournal of Applied Physics, 1971