Self-organized InAs quantum dots formation by As/P exchange reaction on (001) InP substrate
- 11 May 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 72 (19) , 2433-2435
- https://doi.org/10.1063/1.121396
Abstract
In this letter, we present the results of InAsquantum dots(QDs) prepared on a (001) InP substrate. As/P exchange reaction at the surface of InP buffer was used to form the InAs islands in the reactor of low pressuremetalorganic chemical vapor deposition at 600 °C. Preliminary characterizations of the InAsQDs have been investigated by using atomic force microscopy and photoluminescence (PL). Room temperature PL emission from the 0-dimensional system centers at 1520 nm and the full width at half maximum of the PL is 92 meV.Keywords
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