Theory of electron transport through a periodic array of devices with transverse exit leads

We introduce a periodic array of nanoscale semiconductor devices, where each device contains a transverse lead into which conduction electrons can be deflected. These “deflective” arrays exhibit a unique resonance structure with respect to electrons traveling the length of the array: coefficients for reflection and transmission through the array can peak simultaneously at resonance, unlike the analogous case in superlattices. We focus in particular on an array of T-shaped devices, similar to those grown recently by epitaxial methods, and characterized by perfection of structure and extremely small size. The T-array’s nonlinear $I$-$V$ characteristics, along with its multiple paths for electron flow, may lead to interesting switching applications.