Total dose hardness of bonded SOI wafers
- 1 December 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 39 (6) , 2098-2102
- https://doi.org/10.1109/23.211408
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Hole transport in SiO/sub 2/ and reoxidized nitrided SiO/sub 2/ gate insulators at low temperature (FETs)IEEE Transactions on Nuclear Science, 1991
- A study of the effects of processing on the response of implanted buried oxides to total dose irradiationIEEE Transactions on Nuclear Science, 1990
- Bonding of silicon wafers for silicon-on-insulatorJournal of Applied Physics, 1988