Growth of very thin oxide films on silicon for use in MNOS charge storage devices
- 1 February 1972
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 9 (2) , 287-291
- https://doi.org/10.1016/0040-6090(72)90258-1
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Effect of oxide-layer thickness on the speed of m.n.o.s. transistorsElectronics Letters, 1971
- Charge Transport and Storage in Metal-Nitride-Oxide-Silicon (MNOS) StructuresJournal of Applied Physics, 1969
- CHARGE STORAGE MODEL FOR VARIABLE THRESHOLD FET MEMORY ELEMENTApplied Physics Letters, 1969
- Theory of the oxidation of metalsReports on Progress in Physics, 1949