A TEM study of the structure in PtSi ultrathin layers obtained on Si(100) by Pt sputtering and annealing
- 1 July 1991
- journal article
- Published by Elsevier in Surface Science
- Vol. 251-252, 150-154
- https://doi.org/10.1016/0039-6028(91)90971-t
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- A transmission electron microscopy study of low-temperature reaction at the Co-Si interfaceJournal of Applied Physics, 1990
- The structure of ultrathin C/W and Si/W multilayers for high performance in soft x-ray opticsJournal of Applied Physics, 1989
- Dependence of the structural and electrical properties of ultrathin cobalt silicide films on formation conditionsJournal of Materials Research, 1989
- Optically transparent PtSi Schottky contacts on silicon—structure and electrical propertiesVacuum, 1988
- Disordered intermixing at the platinum:silicon interface demonstrated by high-resolution cross-sectional transmission electron microscopy, Auger electron spectroscopy, and MeV ion channelingJournal of Applied Physics, 1988
- Simulation Studies of a Composition Analysis by Thickness-Fringe (CAT) in an Electron Microscope Image of GaAs/AlxGa1-xAs SuperstructureJapanese Journal of Applied Physics, 1986
- Epitaxial PtSi and Pd2Si formed by rapid thermal annealingMaterials Letters, 1985
- Channeling and backscattering studies of the crystalline perfection and the thermal stability of epitaxial PtSi films on SiJournal of Applied Physics, 1979
- Crystallography of PtSi films on (001) siliconJournal of Applied Physics, 1978
- Silicon Schottky Barrier Diode with Near-Ideal I-V CharacteristicsBell System Technical Journal, 1968