High-performance MSM photodetectors on semiinsulating InP:Fe/InGaAs:Fe/InP:Fe
- 2 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 56, 561-564
- https://doi.org/10.1109/iciprm.1992.235626
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Wide-band frequency response measurements of photodetectors using low-level photocurrent noise detectionJournal of Applied Physics, 1993
- Influence of space charges on the impulse response of InGaAs metal-semiconductor-metal photodetectorsJournal of Lightwave Technology, 1992
- Picosecond pulse response characteristics of GaAs metal-semiconductor-metal photodetectorsJournal of Applied Physics, 1991
- Comparison of fast photodetector response measurements by optical heterodyne and pulse response techniquesJournal of Lightwave Technology, 1991
- Lateral high-speed metal-semiconductor-metal photodiodes on high-resistivity InGaAsIEEE Electron Device Letters, 1990
- Long-wavelength (1.0–1.6 μm)In0.52Al0.48As/ In0.53(GaxAl1−x)0.47As/In0.53Ga0.47As metal-semiconductor-metal photodetectorApplied Physics Letters, 1990
- High performance of Fe:InP/InGaAs metal/semiconductor/metal photodetectors grown by metalorganic vapor phase epitaxyIEEE Photonics Technology Letters, 1990
- High-frequency performance of InGaAs metal-semiconductor-metal photodetectors at 1.55 and 1.3 μm wavelengthsApplied Physics Letters, 1989
- High-performance monolithic dual-msm photodetector for long-wavelength coherent receiversElectronics Letters, 1989
- Very high speed GaInAs metal-semiconductor-metal photodiode incorporating an AlInAs/GaInAs graded superlatticeApplied Physics Letters, 1989