Effect of epitaxial realignment on the leakage behavior of arsenic-implanted, as-deposited polycrystalline Si-on-single crystal Si diodes
- 1 May 1993
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 22 (5) , 551-554
- https://doi.org/10.1007/bf02661629
Abstract
No abstract availableKeywords
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