Selective removal of a Si0.7Ge0.3 layer from Si(100)
- 29 April 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (17) , 1899-1901
- https://doi.org/10.1063/1.105067
Abstract
The selective removal of epitaxial Si0.7Ge0.3 from {100} silicon using an aqueous based etch is reported. An etch consisting of HNO3:H2O:HF(0.5%), 40:20:5 at 22 °C, removes Si0.7Ge0.3 at a rate of 207 Å/min, and removes {100} Si at a rate of 16 Å/min. This corresponds to a selectivity of 1321 where the selectivity is defined as the ratio of the Si0.7Ge0.3 to {100} Si etch rates. This etch leaves the surface smooth and free from pitting or trenching as observed by optical microscopy. The results obtained are consistent with a germanium enhanced oxidation mechanism of the Si0.7Ge0.3 alloy during semiconductor removal.Keywords
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