Excess gate-leakage current of InGaAs junction field-effect transistors
- 1 May 1988
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 63 (9) , 4714-4717
- https://doi.org/10.1063/1.340127
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Monolithically integrated n0.53Ga0.47As/InP direct-coupled junction field-effect transistor amplifierIEEE Electron Device Letters, 1986
- A self-aligned In0.53Ga0.47As junction field-effect transistor grown by molecular beam epitaxyIEEE Electron Device Letters, 1984
- In0.53Ga0.47As submicrometer FET's Grown by MBEIEEE Electron Device Letters, 1983
- Applications of scaling to problems in high-field electronic transportJournal of Applied Physics, 1981
- Integrated In 0.53 Ga 0.47 As p-i-n f.e.t. photoreceiverElectronics Letters, 1980
- Spectral shaping of digitised speech for mobile radio applicationsElectronics Letters, 1980
- Impact ionization rates for electrons and holes in Ga0.47In0.53AsApplied Physics Letters, 1980
- Threshold energies for impact ionization by electrons and holes in InPApplied Physics Letters, 1979
- Excess gate current analysis of junction gate FET's by two- dimensional computer simulationIEEE Transactions on Electron Devices, 1978
- Electron Mobility in Direct-Gap Polar SemiconductorsPhysical Review B, 1970