Strain in pseudomorphic films grown on arbitrarily oriented substrates
- 28 November 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (22) , 2789-2791
- https://doi.org/10.1063/1.112564
Abstract
The constraint equations for the unit translation vectors of a pseudomorphic film grown on an arbitrarily oriented substrate are correctly given for the first time. The strain in a pseudomorphic film grown on an arbitrarily oriented substrate is calculated via energy minimization under the pseudomorphic constraint. The strain tensor and the rotation tensor are concisely expressed in terms of lattice mismatch, elastic constants, and the substrate orientation vector. An expression is given for the piezoelectrically generated electric field in a pseudomorphic zinc blende film.Keywords
This publication has 12 references indexed in Scilit:
- Elastic lattice deformation of semiconductor heterostructures grown on arbitrarily oriented substrate surfacesPhysical Review B, 1993
- Molecular-beam epitaxy on exact and vicinal GaAs(1̄1̄1̄) substratesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1993
- Strain tensor elements for misfit-strained [hhk]-oriented cubic crystalsApplied Physics Letters, 1992
- Elastic distortions of strained layers grown epitaxially in arbitrary directionsJournal of Crystal Growth, 1991
- Electromodulation of the electronic structure and optical properties of [111]-growth-axis superlatticesPhysical Review B, 1988
- Optical properties of strained-layer superlattices with growth axis along [111]Physical Review Letters, 1987
- Determination of the lattice constant of epitaxial layers of III-V compoundsJournal of Crystal Growth, 1978
- Defects in epitaxial multilayersJournal of Crystal Growth, 1976
- Defects in epitaxial multilayersJournal of Crystal Growth, 1975
- On spinodal decomposition in cubic crystalsActa Metallurgica, 1962