Electromodulation of the electronic structure and optical properties of [111]-growth-axis superlattices
- 15 June 1988
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 37 (17) , 10415-10418
- https://doi.org/10.1103/physrevb.37.10415
Abstract
We show that large, linear electrooptic coefficients are expected in strained-layer superlattices grown along the [111] axis. The linear electrooptic effects in these superlattices are due to the large, piezoelectrically generated internal electric fields which occur in them. Such linear electrooptic coefficients are not expected in lattice matched superlattices or superlattices grown along [100].Keywords
This publication has 16 references indexed in Scilit:
- Electro-optic effect in semiconductor superlatticesJournal of Applied Physics, 1987
- Observation of large quadratic electro-optic effect in GaAs/AlGaAs multiple quantum wellsApplied Physics Letters, 1987
- Relation between electroabsorption in bulk semiconductors and in quantum wells: The quantum-confined Franz-Keldysh effectPhysical Review B, 1986
- The quantum well self-electrooptic effect device: Optoelectronic bistability and oscillation, and self-linearized modulationIEEE Journal of Quantum Electronics, 1985
- Electric field dependence of optical absorption near the band gap of quantum-well structuresPhysical Review B, 1985
- Electric-field-induced refractive index variation in quantum-well structureElectronics Letters, 1985
- Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark EffectPhysical Review Letters, 1984
- A GaAsxP1−x/GaP strained-layer superlatticeApplied Physics Letters, 1982
- Defects in epitaxial multilayersJournal of Crystal Growth, 1976
- Defects in epitaxial multilayersJournal of Crystal Growth, 1975