Band offsets and electronic structure of SiC/SiO2 interfaces
- 15 March 1996
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 79 (6) , 3108-3114
- https://doi.org/10.1063/1.361254
Abstract
The electronic structure of SiC/SiO2 interfaces was studied for different SiC polytypes (3C, 4H, 6H, 15R) using internal photoemission of electrons from the semiconductor into the oxide. The top of the SiC valence band is located 6 eV below the oxide conduction band edge in all the investigated polytypes, while the conduction band offset at the interface depends on the band gap of the particular SiC polytype. In the energy range up to 1.5 eV above the top of the SiC valence band, interface states were found. Their electron spectrum is similar to that of sp2‐bonded carbon clusters in diamond‐like a‐C:H films suggesting the presence of elemental carbon at the SiC/SiO2 interfaces.This publication has 22 references indexed in Scilit:
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