Single-crystal n-InAs coupled Josephson junction
- 1 January 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (1) , 92-94
- https://doi.org/10.1063/1.95809
Abstract
A high electron mobility single‐crystal n‐InAs coupled Josephson junction with refractory metal Nb electrodes has been fabricated. Josephson current has been obtained for devices with electron carrier concentrations of 1016–1018 cm−3 and with Nb electrode spacings longer than 0.5 μm. The devices have a planar geometry with implicit potential for gate control. The rf sputter cleaning of the InAs surface prior to Nb deposition is found to have significant effects on the performance of the devices. The device characteristics are explained by the proximity effect theory.Keywords
This publication has 6 references indexed in Scilit:
- Silicon-coupled Josephson junctions and super-Schottky diodes with coplanar electrodesIEEE Transactions on Electron Devices, 1981
- Feasibility of hybrid Josephson field effect transistorsJournal of Applied Physics, 1980
- Superconducting contacts to p-InAsIEEE Transactions on Magnetics, 1979
- Silicon-barrier Josephson junctions in coplanar and sandwich configurationsIEEE Transactions on Magnetics, 1977
- Josephson tunneling through locally thinned silicon wafersApplied Physics Letters, 1974
- Schottky barrier height of n-InxGa1−xAs diodesApplied Physics Letters, 1973