Etching yields of SiO2 by low energy CFx+ and F+ ions
- 25 October 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (17) , 2336-2338
- https://doi.org/10.1063/1.110518
Abstract
Etching yields of SiO2 by mass‐separated F+, CF+, CF2+, CF3+, and Ar+ ions have been measured at low ion energies ranging from 80 to 350 eV. CF3+ and CF2+ ions have higher etching yields than CF+ and F+ ions. At low ion energies, SiO2 cannot be etched and some film deposition is observed on the SiO2 surface. For example, in the case of CF+ ions, SiO2 can be etched at ion energies above 200 eV. This film deposition is caused by reactions of CFx+ ions at the SiO2 surface, and neutrals coming from the ion source also have some effect on this deposition.Keywords
This publication has 7 references indexed in Scilit:
- SiO2 Etching Characteristics with Low-Energy Ions Generated by Electron Cyclotron Resonance Plasma Using CF4 and NF3 GasesJapanese Journal of Applied Physics, 1992
- Cold and Low-Energy Ion Etching (COLLIE)Japanese Journal of Applied Physics, 1989
- Sputtering of silicon dioxide near thresholdApplied Physics Letters, 1988
- Near threshold sputtering of Si and SiO2 in a Cl2 environmentApplied Physics Letters, 1987
- Mechanism of Dry Etching of Silicon Dioxide: A Case of Direct Reactive Ion EtchingJournal of the Electrochemical Society, 1985
- Langmuir Probe Measurements on CHF 3 and CF 4 Plasmas: The Role of Ions in the Reactive Sputter Etching of SiO2 and SiJournal of the Electrochemical Society, 1983
- Low Energy Ion Beam EtchingJournal of the Electrochemical Society, 1981