A new "mixed-mode" base current degradation mechanism in bipolar transistors

This publication has 4 references indexed in Scilit:

• Proton radiation response of SiGe HBT analog and RF circuits and passives
  IEEE Transactions on Nuclear Science, 2001
• Hot electron and hot hole degradation of UHV/CVD SiGe HBT's
  IEEE Transactions on Electron Devices, 2000
• Degradation of silicon bipolar junction transistors at high forward current densities
  IEEE Transactions on Electron Devices, 1997
• Ionizing radiation tolerance and low-frequency noise degradation in UHV/CVD SiGe HBT's
  IEEE Electron Device Letters, 1995