Direct observation of GaP(110) surface states
- 15 June 1985
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 31 (12) , 8314-8316
- https://doi.org/10.1103/physrevb.31.8314
Abstract
We report the direct observation of the dangling-bond surface state in gallium phosphide. A strong surface-sensitive feature is detected at -0.8±0.05 eV from the top of the valence band. The results, obtained by synchrotron radiation angle-integrated photoemission, are in agreement with the predictions of a theoretical model based on a 27.5° rotation of the Ga-P bond. The analysis of the data indicates that the phosphorus site is likely the oxygen chemisorption site at the initial stages of exposure.Keywords
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