An integrated process model for the growth of oxide crystals by the Czochralski method
- 31 October 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 97 (3-4) , 792-826
- https://doi.org/10.1016/0022-0248(89)90583-6
Abstract
No abstract availableKeywords
This publication has 56 references indexed in Scilit:
- Dynamics of liquid-encapsulated czochralski growth of gallium arsenide: Comparing model with experimentJournal of Crystal Growth, 1989
- Finite-element methods for analysis of the dynamics and control of Czochralski crystal growthJournal of Scientific Computing, 1987
- Thermal-capillary analysis of Czochralski and liquid encapsulated Czochralski crystal growthJournal of Crystal Growth, 1986
- Czochralski growth of siliconJournal of Crystal Growth, 1983
- Finite-element simulation of Czochralski bulk flowJournal of Crystal Growth, 1983
- Czochralski silicon pull rate limitsJournal of Crystal Growth, 1981
- Measurement of meniscus angle in laser heated float zone growth of constant diameter sapphire crystalsJournal of Crystal Growth, 1980
- Simulation of fluid flow in Gd3Ga5O12 meltsJournal of Crystal Growth, 1977
- Czochralski growth of large diameter LiTaO3 crystalsJournal of Crystal Growth, 1974
- The meniscus in Czochralski growthJournal of Crystal Growth, 1974