Influence of positive ions on the current-voltage characteristics of MOS structures
- 1 May 1978
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 49 (5) , 2876-2879
- https://doi.org/10.1063/1.325170
Abstract
A new mathematical approach for the influence of mobile positive ions on the current‐voltage characteristics of MOS structures is presented. This new method gives formulations which are more applicable than those described in the literature. Examples of the application of these formulations are presented.This publication has 7 references indexed in Scilit:
- On the Behavior of Mobile Ions in Dielectric Layers of MOS StructuresJournal of the Electrochemical Society, 1976
- Thermally stimulated ionic conductivity of sodium in thermal SiO2Journal of Applied Physics, 1975
- The triangular voltage sweep method as a tool in studies of mobile charge in MOS structuresPhysica Status Solidi (a), 1975
- Equilibrium distribution of the uncompensated mobile charge in the dielectric layer of a MOS structurePhysica Status Solidi (a), 1974
- The Current Understanding of Charges in the Thermally Oxidized Silicon StructureJournal of the Electrochemical Society, 1974
- Application of Triangular Voltage Sweep Method to Mobile Charge Studies in MOS StructuresJournal of the Electrochemical Society, 1971
- Ionic Contamination and Transport of Mobile Ions in MOS StructuresJournal of the Electrochemical Society, 1971