Type II heterojunctions in the GaInAsSb/GaSb system
- 1 July 1994
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 9 (7) , 1279-1295
- https://doi.org/10.1088/0268-1242/9/7/001
Abstract
No abstract availableKeywords
This publication has 58 references indexed in Scilit:
- Staggered-lineup heterojunctions in the system of GaSbInAsSuperlattices and Microstructures, 1990
- Carrier dynamics and recombination mechanisms in staggered-alignment heterostructuresIEEE Journal of Quantum Electronics, 1988
- Band discontinuities in GaAs/AlxGa1−xAs heterojunction photodiodesApplied Physics Letters, 1987
- A bird's-eye view on the evolution of semiconductor superlattices and quantum wellsIEEE Journal of Quantum Electronics, 1986
- Densities and mobilities of coexisting electrons and holes in GaSb/InAs/GaSb quantum wellsSurface Science, 1986
- Staggered-lineup heterojunctions as sources of tunable below-gap radiation: Experimental verificationApplied Physics Letters, 1984
- Staggered-lineup heterojunctions as sources of tunable below-gap radiation: Operating principle and semiconductor selectionIEEE Electron Device Letters, 1983
- Electron-hole subbands at the GaSbInAs interfaceSurface Science, 1980
- InAs-GaSb superlattice energy structure and its semiconductor-semimetal transitionPhysical Review B, 1978
- Electroluminescence of heavily-doped heterojunctions pAlxGa1-xAs-nGaAsJournal of Luminescence, 1970