Stoichiometric disturbances in ion implanted compound semiconductors
- 1 August 1981
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (8) , 5050-5055
- https://doi.org/10.1063/1.329448
Abstract
Disturbances in the stoichiometry of compound semiconductors which result from ion implantation are calculated using a Boltzmann transport equation approach. Results for 50-keV boron, 150-keV silicon, and 400-keV selenium implanted into silicon carbide, indium phosphide, and gallium arsenide are presented. Possible complications in the annealing of such implants are discussed.This publication has 10 references indexed in Scilit:
- An application of the Boltzmann transport equation to ion range and damage distributions in multilayered targetsJournal of Applied Physics, 1980
- Range calculations using multigroup transport methodsJournal of Nuclear Materials, 1979
- The prospects for ultrahigh-speed VLSI GaAs digital logicIEEE Journal of Solid-State Circuits, 1979
- p-n junction diodes in InP and In1−xGaxAsyP1−y fabricated by beryllium-ion implantationApplied Physics Letters, 1979
- Beryllium-ion implantation in InP and In1−xGaxAsyP1−yApplied Physics Letters, 1979
- Sputtering Calculations with the Discrete-Ordinates MethodNuclear Science and Engineering, 1978
- N-type doping of indium phosphide by implantationSolid-State Electronics, 1978
- Ion-implanted n- and p-type layers in InPApplied Physics Letters, 1977
- Calculations of nuclear stopping, ranges, and straggling in the low-energy regionPhysical Review B, 1977
- Energy Dissipation by Ions in the kev RegionPhysical Review B, 1961