Relation between the dislocations in chemically vapour-deposited diamond and the linewidth of the Raman spectrum
- 1 May 1993
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 228 (1-2) , 76-79
- https://doi.org/10.1016/0040-6090(93)90568-a
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Mechanism of diamond growth by chemical vapor deposition on diamond (100), (111), and (110) surfaces: Carbon-13 studiesJournal of Applied Physics, 1991
- Epitaxially Grown Diamond (001) 2×1/1×2 Surface Investigated by Scanning Tunneling Microscopy in AirJapanese Journal of Applied Physics, 1991
- Rapid single crystalline diamond growth by acetylene-oxygen flame depositionJournal of Crystal Growth, 1990
- Synthesis of B-doped diamond filmJournal of Crystal Growth, 1990
- Epitaxial Growth of High Quality Diamond Film by the Microwave Plasma-Assisted Chemical-Vapor-Deposition MethodJapanese Journal of Applied Physics, 1990
- Characterization of Boron-Doped Diamond FilmJapanese Journal of Applied Physics, 1989
- Electrical Characteristics of Metal Contacts to Boron-Doped Diamond Epitaxial FilmJapanese Journal of Applied Physics, 1989
- Epitaxial growth of diamond on diamond substrate by plasma assisted CVDApplied Surface Science, 1988
- Vapor growth of diamond on diamond and other surfacesJournal of Crystal Growth, 1981
- Structure of autoepitaxial diamond filmsJournal of Crystal Growth, 1975