EPR Studies on Silicon‐Doped Alx Ga1−x As Epitaxial Layers
- 1 July 1975
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 70 (1) , K23-K24
- https://doi.org/10.1002/pssb.2220700149
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- EPR Studies on AlxGa1‐xAs Mixed CrystalsPhysica Status Solidi (b), 1973
- Band Structure and Pseudopotential Form Factors for AlAsPhysica Status Solidi (b), 1973
- Strain-Dependent Electron Paramagnetic Resonance and Spin-Valley Coupling of Shallow Triplet Sn Donors in GaPPhysical Review B, 1972
- Electron Spin Resonance Experiments on Donors in Silicon. III. Investigation of Excited States by the Application of Uniaxial Stress and Their Importance in Relaxation ProcessesPhysical Review B, 1961