Pressure Dependence of the Resistivity, Hall Coefficient, and Energy Gap for InAs

The effect of hydrostatic pressure on the resistivity of intrinsic $n$-type InAs has been measured in the range from 1 to 2000 atmospheres. The resistivity and Hall constant were found to increase exponentially with increasing pressure. Measurements of the resistivity and Hall effect yield an increase of 19 and 12 percent respectively for a change in pressure of 2000 atmospheres. If it is assumed the increase in resistivity is produced by an increase in the energy gap our measurements indicate a shift of 8.8×${10}^{-6\mathrm{}}$ ev/atmosphere. The increase in Hall constant represents a shift of 5.5×${10}^{-6\mathrm{}}$ ev/atmosphere.