Interstitial versus substitutional oxygen in silicon
- 1 November 1960
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 16 (1-2) , 44-45
- https://doi.org/10.1016/0022-3697(60)90069-x
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Mechanism of the Formation of Donor States in Heat-Treated SiliconPhysical Review B, 1958
- Factors Determining the Oxygen Content of Liquid Silicon at Its Melting PointJournal of Applied Physics, 1958
- Oxygen impurity in silicon single crystalsJournal of Physics and Chemistry of Solids, 1958
- Infrared Absorption of Oxygen in SiliconPhysical Review B, 1957
- Oxygen Content of Silicon Single CrystalsJournal of Applied Physics, 1957
- Infrared Absorption and Oxygen Content in Silicon and GermaniumPhysical Review B, 1956
- Densitometric and Electrical Investigation of Boron in SiliconPhysical Review B, 1955