Location of the Source of Recombination Radiation in Ga (As1−xPx) p-n Junctions by Electron Bombardment

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1 June 1965

journal article
research article
Published by AIP Publishing in Journal of Applied Physics

Vol. 36 (6) , 2087
https://doi.org/10.1063/1.1714416

Abstract

No abstract available

This publication has 1 reference indexed in Scilit:

RECOMBINATION SCHEME AND INTRINSIC GAP VARIATION IN GaAs1−x−Px SEMICONDUCTORS FROM ELECTRON BEAM AND p-n DIODE EXCITATION
Applied Physics Letters, 1964