Mössbauer Studies of ImplantedIons in Semiconductors and Alkali Halides
- 1 April 1973
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 7 (7) , 3014-3027
- https://doi.org/10.1103/physrevb.7.3014
Abstract
The Groningen isotope separator has been used to implant into single crystals of Si, Ge, and diamond as well as several alkali halides. The spectra of all semiconducting sources display two well-separated Mössbauer lines of approximately equal intensity. The parameters of the spectra were found to be only slightly dependent on the annealing temperature type of dopant already present in the semiconductors, Mössbauer source temperature, implantation temperature, and dose. The results obtained for in these semiconductors are qualitatively similar to the data obtained by the Stanford group using the Coulomb excitation implantation technique with a Van de Graaff accelerator. The separation between the lines for the sources is seen to be proportional to the separation obtained with the sources. On the basis of the Mössbauer spectra, as well as the previously published channeling data and the systematics of the isomer shifts, the lines are tentatively assigned to be due to iodine atoms in substitutional and interstitial sites. The nature of the interaction causing the very large shifts is briefly discussed. In contrast to the semiconductor results, the Mössbauer spectra obtained with implanted alkali halide sources are very sensitive to annealing and to the dose. Both single-line spectra as well as spectra displaying an unresolved structure were obtained. The isomer shifts obtained from the single-line spectra are quite large; about five times larger than the spread of isomer shifts previously obtained from the alkali iodides. For the case of in LiF the large shift is probably caused by the large degree of overlap that an iodine ion experiences because of the smaller interatomic spacing in the LiF lattice compared to the alkali iodide lattices.
Keywords
This publication has 18 references indexed in Scilit:
- Lattice location and dopant behavior of group II and VI elements implanted in siliconRadiation Effects, 1971
- Mössbauer Study of 57Co Implanted in DiamondThe Journal of Chemical Physics, 1970
- Mössbauer Study of IF5 and IF7The Journal of Chemical Physics, 1969
- Implantation and Annealing Behavior of Group III and V Dopants in Silicon as Studied by the Channeling TechniqueJournal of Applied Physics, 1969
- Observation of the Mössbauer effect following coulomb excitation of 73GePhysics Letters, 1966
- Solid State and Nuclear Results from Mössbauer Studies withPhysical Review B, 1964
- Application and Interpretation of Isomer ShiftsReviews of Modern Physics, 1964
- Study of Iron Ions in NaCl Using the Mössbauer Effect. I. The CoPrecipitated StatePhysical Review B, 1963
- Mössbauer effect isomer shift of Fe57 in silicon and germaniumJournal of Physics and Chemistry of Solids, 1962
- Interpretation of theIsomer ShiftPhysical Review Letters, 1961